Student Lecture Series: May 3rd 2019

Yating Wan
Bowers group
​ECE Dept, UCSB

Low Threshold 1.55 um Quantum Dash Microring Lasers 

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We report the first room-temperature-continuous-wave (CW) operation of electrically-injected InAs quantum-dash microring lasers emitting at 1.55 µm telecom window. The microrings sustain CW lasing up to 55°C, while the lowest threshold current density is 528 A/cm2 .

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Lei Wang
Klamkin group
​ECE Dept, UCSB

Quantum dot devices on silicon grown by MOCVD 

Direct heteroepitaxy of III-V quantum dots (QDs) is promising for achieving a monolithic laser source for silicon photonics. QDs are believed to be less sensitive to defects than quantum wells, and also offer desirable characteristics for high temperature operation and reduced sensitivity to reflection, because of the 3D carrier confinement of individual QDs. In this talk, I will introduce my research on growth of aluminium-free InAs/GaAs quantum dot laser structure on CMOS-compatible (001) by MOCVD, and some initial fabrication works for both electrically and optically devices. 

Friday, May 3 | 12:00pm | Elings 1605
Pizza will be provided!