Monolithic integration of III/V-based functionalities to CMOS-based Si-micro- and nanoelectronics - Dr. Stolz

Dr. Wolfgang Stolz

Professor and Co-head of the Structure
and Technology Research Laboratory 

Material Sciences Center and Faculty of Physics at Philipps University in Marburg
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Chief Technology Officer (CTO)

NAsP III/V GmbH

Friday July 21st, 1:00pm in Henley Hall 1010 

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In recent years, the monolithic integration of III/V-semiconductor materials and heterostructures on CMOS-compatible (001) Si-substrate is gaining increasing interest for the realization of novel integrated circuits with improved electronic, optoelectronic or photonic functionalities.   
    The principal challenges of the III/V-material integration on CMOS-compatible (001) Si-substrates will be reviewed and possible solutions for the high-quality deposition of III/V-layer stacks will be demonstrated for large area 300 mm (001) Si-wafers by applying low-temperature metal organic vapour phase epitaxy (MOVPE) processes. Examples of successfully developed technologies including defect-free GaP-on-Si-template wafers as well as novel lattice-matched Ga(NAsP)-based laser stacks for Si-photonics applications will be presented and discussed.

Schematical integration concept of Ga(NAsP)-based laser structures on Si substrate in recess opening to guarantee flat wafer surfaces for subsequent lithography steps in the CMOS-process flow. https://doi.org/10.1016/bs.semsem.2019.07.003

Schematic representation of a GaNAsP QW laser device showing substrate, cladding, SCH, and barrier layers. https://doi.org/10.1063/5.0081069

Wolfgang Stolz is full professor and co-head of the Structure and Technology Research Laboratory (Material Sciences Center and Faculty of Physics, Philipps-University Marburg (Germany)), Adjunct Professor at the Optical Sciences Center (University of Arizona,
Tucson (USA)) and Chief Technology Officer (CTO NAsP III/V GmbH, Marburg (Germany)). 
His current fields of activities include the epitaxial growth for a wide range of III/V-compound semiconductor material systems and heterostructures by applying metal organic vapour phase epitaxy (MOVPE) as well as realization of novel device concepts for electronic, solar cell and laser applications in particular also monolithically integrated on CMOS-compatible (001) Si-substrates.