Friday Nov 9th, 1pm, Elings 1605
The past decade has seen accelerated progress in III-V semiconductor infrared photodetector technology. The advent of the unipolar barrier infrared detector device architecture has in many instances greatly alleviated generation-recombination (G-R) and surface-leakage dark current issues that had been problematic for many III-V photodiodes. Meanwhile advances in a variety type-II superlattices (T2SLs) such as InGaAs/GaAsSb, InAs/GaSb, and InAs/InAsSb, as well as in bulk III-V material such as InGaAsSb and metamorphic InAsSb, have provided continuously adjustable detector cutoff wavelength coverage from the short wavelength infrared (SWIR) to the very long wavelength infrared (VLWIR). The confluence of these developments has led to a new generation of versatile, cost-effective, high-performance infrared detectors and focal plane arrays based on robust III-V semiconductors, providing a viable alternative to HgCdTe (MCT).
Thorlabs designs and produces a variety of optomechanical and optoelectronic components in 15 facilities around the globe. Thorlabs seeks to listen and serve its customers with over 20,000 products available.
Founded in 2018, Nexus Photonics has developed integrated photonics ready to scale. Smaller, lighter and faster, their platform outperforms industry benchmarks, and operates in an ultra-broadband wavelength range from ultraviolet to infrared to support a wide breadth of practical applications.