Advanced Semiconductor Lasers - Dr. Shinji Matsuo

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Advanced Semiconductor Lasers: Ultra-low Operating Energy and Hetergeneous Integration with Si Photonics Devices

Dr. Shinij Matsuo​
NTT Device Technology Laboratories

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Friday, February 7th from 12:00 - 1:00 pm in ESB 2001 

The electrical power consumed in data transmission systems is now hampering efforts to further increase speed and capacity at various scales, ranging from data centers to microprocessors. Optical interconnects employing ultra-low-energy directly-modulated lasers will play a key role in reducing the power consumption. Since a laser's operating energy is proportional to the size of its active volume, developing high-performance laser with a small cavity is important. For this purpose, we have developed DFB and photonic crystal (PhC) lasers, in which active regions are buried with an InP layer. Thanks to the reduction of cavity size and the increase in optical confinement factor, we have achieved an extremely small operating energy of 4.4 fJ/bit by employing a wavelength-scale PhC cavity. Cost reduction is also an important issue because a larger number of transmitters are required for short-distance optical links. For this purpose, Si photonics technology is expected to be a potential solution because it can provide large-scale photonic integrated circuits (PICs). Therefore, heterogeneous integration of III-V compound semiconductors and Si has attracted much attention. To fabricate these devices, we have developed wafer-scale fabrication  that employs regrowth of III-V compound semiconductors on directly-bonded thin InP templates on an SiO2/Si substrate. 

Dr. Matsuo discusses some of the equations related to semiconductor lasers.